Invention Grant
- Patent Title: Semiconductor device and semiconductor package
- Patent Title (中): 半导体器件和半导体封装
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Application No.: US14078795Application Date: 2013-11-13
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Publication No.: US09123535B2Publication Date: 2015-09-01
- Inventor: Kenichi Yoshimochi
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Rabin & Berdo, P.C.
- Priority: JP2010-276127 20101210
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L27/02 ; H01L23/495 ; H01L27/06 ; H01L29/06 ; H01L29/66 ; H01L29/78 ; H01L27/07 ; H01L29/417 ; H01L29/45 ; H01L29/47 ; H01L29/872 ; H01L23/00 ; H01L23/31
Abstract:
A semiconductor device capable of ensuring a withstand voltage of a transistor and reducing a forward voltage of a Schottky barrier diode in a package with the transistor and the Schottky barrier diode formed on chip, and a semiconductor package formed by a resin package covering the semiconductor device are provided. The semiconductor device 1 includes a semiconductor layer 22, a transistor area D formed on the semiconductor layer 22 and constituting the transistor 11, and a diode area C formed on the semiconductor layer 22 and constituting the Schottky barrier diode 10. The semiconductor layer 22 in the diode area C is thinner than the semiconductor layer 22 in the transistor area D.
Public/Granted literature
- US20140061774A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR PACKAGE Public/Granted day:2014-03-06
Information query
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