Invention Grant
- Patent Title: Semiconductor device and method
- Patent Title (中): 半导体器件及方法
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Application No.: US13278681Application Date: 2011-10-21
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Publication No.: US09123544B2Publication Date: 2015-09-01
- Inventor: Georg Meyer-Berg , Christian Birzer
- Applicant: Georg Meyer-Berg , Christian Birzer
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L23/00 ; H01L23/522 ; H01L23/528
Abstract:
An electrical device includes a semiconductor chip. The semiconductor chip includes a routing line. An insulating layer is arranged over the semiconductor chip. A solder deposit is arranged over the insulating layer. A via extends through an opening of the insulating layer to electrically connect the routing line to the solder deposit. A front edge line portion of the via facing the routing line is substantially straight, has a concave curvature or has a convex curvature of a diameter greater than a maximum lateral dimension of the via.
Public/Granted literature
- US20130099383A1 Semiconductor Device and Method Public/Granted day:2013-04-25
Information query
IPC分类:
