A field limiting regions are arranged in the upper surface of a semiconductor region in the peripheral region and connected to upper portions of at least some of columnar regions. An insulating film is provided on the semiconductor region in the peripheral region and covering a field limiting region. A coupling plate electrode is provided above a pair of the field limiting regions adjacent to each other in a direction from a boundary between the element region and the peripheral region to an outer edge of the peripheral region. The joint field regions are in contact with one of the pair of field limiting regions on a boundary side in an opening formed in the insulating film, and reaching the other one of the pair of the field limiting regions on an outer edge side with the insulating film interposed therebetween.