Invention Grant
- Patent Title: Semiconductor devices using air spaces to separate conductive structures and methods of manufacturing the same
- Patent Title (中): 使用空气空间来分离导电结构的半导体器件及其制造方法
-
Application No.: US14020252Application Date: 2013-09-06
-
Publication No.: US09123550B2Publication Date: 2015-09-01
- Inventor: Nak-jin Son
- Applicant: Nak-jin Son
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2012-0102269 20120914
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L29/06 ; H01L21/764 ; H01L27/108 ; H01L21/768

Abstract:
A semiconductor device includes a substrate, a conductive pattern (e.g., a contact plug) on an active region of the substrate and having respective first and second sidewalls on opposite first and second sides of the conductive pattern, and first and second conductive lines (e.g., bit lines) on the substrate on respective ones of the first and second sides of conductive pattern and separated from the respective first and second sidewalls by asymmetric first and second air spaces.
Public/Granted literature
Information query
IPC分类: