The present disclosure provides a rectifier. The rectifier includes a N-type epitaxial layer, a plurality of P-type diffusion regions and a plurality of N-type diffusion regions. The P-type diffusion regions are disposed in the N-type epitaxial layer, and the N-type diffusion regions are respectively disposed in the P-type diffusion regions. Wherein, the P-type diffusion regions are electronically coupled to the N-type diffusion regions.