Invention Grant
- Patent Title: Bipolar junction transistor
- Patent Title (中): 双极结晶体管
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Application No.: US13164744Application Date: 2011-06-20
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Publication No.: US09123558B2Publication Date: 2015-09-01
- Inventor: Sheng-Hung Fan , Chu-Wei Hu , Chien-Chih Lin , Chih-Chung Chiu , Zheng Zeng , Wei-Li Tsao
- Applicant: Sheng-Hung Fan , Chu-Wei Hu , Chien-Chih Lin , Chih-Chung Chiu , Zheng Zeng , Wei-Li Tsao
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: MEDIATEK INC.
- Current Assignee: MEDIATEK INC.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L29/73
- IPC: H01L29/73 ; H01L29/06 ; H01L29/40 ; H01L29/732
Abstract:
In accordance with one embodiment, the present invention provides a bipolar junction transistor including an emitter region; a base region; a first isolation between the emitter region and the base region; a gate on the first isolation region and overlapping at least a portion of a periphery of the emitter region; a collector region; and a second isolation between the base region and the collector region.
Public/Granted literature
- US20120319243A1 BIPOLAR JUNCTION TRANSISTOR Public/Granted day:2012-12-20
Information query
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