Invention Grant
- Patent Title: Dark current reduction for back side illuminated image sensor
- Patent Title (中): 背面照明图像传感器的暗电流降低
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Application No.: US14323676Application Date: 2014-07-03
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Publication No.: US09123616B2Publication Date: 2015-09-01
- Inventor: Shou-Shu Lu , Hsun-Ying Huang , Hsin-Jung Huang , Chun-Mao Chiu , Chia-Chi Hsiao , Yung-Cheng Chang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L27/146
- IPC: H01L27/146
Abstract:
A method of fabricating a semiconductor image sensor device is disclosed. A plurality of radiation-sensing regions is formed in a substrate. The radiation-sensing regions are formed in a non-scribe-line region of the image sensor device. An opening is formed in a scribe-line region of the image sensor device by etching the substrate in the scribe-line region. A portion of the substrate remains in the scribe-line region after the etching. The opening is then filled with an organic material.
Public/Granted literature
- US20140322857A1 Dark Current Reduction for Back Side Illuminated Image Sensor Public/Granted day:2014-10-30
Information query
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