Invention Grant
US09123627B1 Methods of forming alternative material fins with reduced defect density for a FinFET semiconductor device
有权
为FinFET半导体器件形成具有降低的缺陷密度的替代材料翅片的方法
- Patent Title: Methods of forming alternative material fins with reduced defect density for a FinFET semiconductor device
- Patent Title (中): 为FinFET半导体器件形成具有降低的缺陷密度的替代材料翅片的方法
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Application No.: US14267010Application Date: 2014-05-01
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Publication No.: US09123627B1Publication Date: 2015-09-01
- Inventor: Yi Qi , Ajey Poovannummoottil Jacob , Shurong Liang
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L29/165
- IPC: H01L29/165 ; H01L29/66 ; H01L29/36 ; H01L21/306 ; H01L21/322
Abstract:
One method disclosed herein includes removing at least a portion of a fin to thereby define a fin trench in a layer of insulating material, forming first and second layers of semiconductor material in the fin trench, after forming the second layer of semiconductor material, performing an anneal process to induce defect formation in at least the first layer of semiconductor material, wherein, after the anneal process is performed, the upper surface of the second layer of semiconductor material is substantially defect-free, forming a layer of channel semiconductor material on the upper surface of the second layer of semiconductor material and forming a gate structure around at least a portion of the channel semiconductor material.
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