Invention Grant
- Patent Title: Power semiconductor module
- Patent Title (中): 功率半导体模块
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Application No.: US14512372Application Date: 2014-10-10
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Publication No.: US09123639B2Publication Date: 2015-09-01
- Inventor: Daisuke Kimijima , Yuji Ichimura
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki-Shi
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki-Shi
- Agency: Rabin & Berdo, P.C.
- Priority: JP2013-222969 20131028
- Main IPC: H01L23/24
- IPC: H01L23/24 ; H01L29/739

Abstract:
A power semiconductor module available under environments of high temperature has enhanced heat resistance of silicone gel filled up in a case. A power semiconductor module comprises a power semiconductor element, an insulating substrate mounted with the power semiconductor element, a resin case containing the power semiconductor element and the insulating substrate, a silicone gel injected into the resin case, and a sheet composed of a silicone rubber or silicone resin, disposed between the resin case and the silicone gel within the resin case.
Public/Granted literature
- US20150115428A1 POWER SEMICONDUCTOR MODULE Public/Granted day:2015-04-30
Information query
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