Invention Grant
US09123644B2 Semiconductor device, method of manufacturing semiconductor device and system of processing substrate
有权
半导体器件，半导体器件的制造方法以及衬底的处理系统
- Patent Title: Semiconductor device, method of manufacturing semiconductor device and system of processing substrate
- Patent Title (中): 半导体器件，半导体器件的制造方法以及衬底的处理系统
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Application No.: US14623495Application Date: 2015-02-16
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Publication No.: US09123644B2Publication Date: 2015-09-01
- Inventor: Arito Ogawa
- Applicant: HITACHI KOKUSAI ELECTRIC INC.
- Applicant Address: JP Tokyo
- Assignee: HITACHI KOKUSAI ELECTRIC INC.
- Current Assignee: HITACHI KOKUSAI ELECTRIC INC.
- Current Assignee Address: JP Tokyo
- Agency: SOLARIS Intellectual Property Group, PLLC
- Priority: JP2011-091248 20110415; JP2012-043872 20120229
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/28 ; H01L29/51 ; H01L29/49
Abstract:
A semiconductor device includes a gate insulating film formed on a semiconductor substrate; a first conductive metal-containing film formed on the gate insulating film; a second conductive metal-containing film, formed on the first metal-containing film, to which aluminum is added; and a silicon film formed on the second metal-containing film.
Public/Granted literature
- US20150162200A1 SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SYSTEM OF PROCESSING SUBSTRATE Public/Granted day:2015-06-11
Information query
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