Invention Grant
- Patent Title: Reducing defects in patterning processes
- Patent Title (中): 减少图案化过程中的缺陷
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Application No.: US14206501Application Date: 2014-03-12
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Publication No.: US09123662B2Publication Date: 2015-09-01
- Inventor: Ching-Yu Chang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/3213 ; H01L21/308 ; H01L21/027 ; H01L21/033
Abstract:
A method includes forming a mask layer forming a first photo resist over the mask layer, performing a first patterning step on the first photo resist, and performing a first etching step on the mask layer using the first photo resist as an etching mask. The first photo resist is then removed. The method further includes forming a particle-fixing layer on a top surface and sidewalls of the mask layer, forming a second photo resist over the particle-fixing layer and the mask layer, performing a second patterning step on the second photo resist, and performing a second etching step on the particle-fixing layer and the mask layer using the second photo resist as an etching mask. The particle-fixing layer is etched through. A target layer underlying the mask layer is etched using the mask layer as an etching mask.
Public/Granted literature
- US20140273478A1 Reducing Defects in Patterning Processes Public/Granted day:2014-09-18
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