Invention Grant
- Patent Title: Nanowire field-effect transistor and method for manufacturing same
- Patent Title (中): 纳米线场效应晶体管及其制造方法
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Application No.: US14385450Application Date: 2013-03-11
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Publication No.: US09123695B2Publication Date: 2015-09-01
- Inventor: ChangKi Baek , TaiUk Rim , MyungDong Ko
- Applicant: POSTECH ACADEMY—INDUSTRY FOUNDATION
- Applicant Address: KR Pohang-Si
- Assignee: POSTECH ACADEMY-INDUSTRY FOUNDATION
- Current Assignee: POSTECH ACADEMY-INDUSTRY FOUNDATION
- Current Assignee Address: KR Pohang-Si
- Agency: Foley & Lardner LLP
- Priority: KR10-2012-0025726 20120313; KR10-2012-0077624 20120717
- International Application: PCT/KR2013/001939 WO 20130311
- International Announcement: WO2013/137605 WO 20130919
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/423 ; H01L29/775 ; B82Y10/00 ; B82Y40/00 ; H01L29/66 ; H01L29/10 ; B82Y15/00
Abstract:
Provided are a nanowire field-effect transistor and a method for manufacturing the same. The nanowire field-effect transistor can enable a source region to be positioned, with respect to an asymmetrical nanowire channel, adjacent to a region in which the diameter of the nanowire channel is large, can enable a drain region to be positioned adjacent to a region in which the diameter of the nanowire channel is small, can enable an ON current to be increased in a state in which a threshold voltage level is kept the same, and can enable the current drivability of a gate electrode to be improved.
Public/Granted literature
- US20150069330A1 NANOWIRE FIELD-EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING SAME Public/Granted day:2015-03-12
Information query
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