Invention Grant
- Patent Title: Semiconductor cooling device
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Application No.: US14145310Application Date: 2013-12-31
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Publication No.: US09123697B2Publication Date: 2015-09-01
- Inventor: Masaomi Miyazawa
- Applicant: MITSUBISHI ELECTRIC CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2013-090875 20130424
- Main IPC: H01L23/46
- IPC: H01L23/46 ; H01L23/427 ; H01L23/473 ; H01L23/467 ; H01L23/367 ; H01L23/36 ; H01L23/34
Abstract:
A semiconductor cooling device includes: a cooling medium flow channel, through which a cooling medium for cooling a semiconductor chip flows; a laminar flow section which is provided in a region upstream of the cooling medium flow channel and allows the cooling medium to flow in the form of laminar flow; and a turbulent flow section which is provided in a region downstream of the laminar flow section in the cooling medium flow channel and allows the cooling medium, which flows in the form of laminar flow from the laminar flow section, to flow in the form of turbulent flow.
Public/Granted literature
- US20140319674A1 SEMICONDUCTOR COOLING DEVICE Public/Granted day:2014-10-30
Information query
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