Methods and apparatus for forming a semiconductor device are provided which may include any number of features. One feature is a method of forming an interconnect structure that results in the interconnect structure having a co-planar or flat top surface. Another feature is a method of forming an interconnect structure that results in the interconnect structure having a surface that is angled upwards greater than zero with respect to a top surface of the substrate. The interconnect structure can comprise a damascene structure, such as a single or dual damascene structure, or alternatively, can comprise a silicon-through via (TSV) structure.