Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14204203Application Date: 2014-03-11
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Publication No.: US09123704B2Publication Date: 2015-09-01
- Inventor: Yo Sasaki , Yuuji Hisazato , Kazuya Kodani , Atsushi Yamamoto , Hitoshi Matsumura
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-Ku, Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-Ku, Tokyo
- Agency: White & Case LLP
- Priority: JP2013-191132 20130913
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L23/00
Abstract:
According to one embodiment, a semiconductor device includes a semiconductor element, an interconnection layer, and a bonding layer. The interconnection layer includes Cu. The bonding layer includes a first alloy that is an alloy of Cu and a first metal other than Cu between the semiconductor element and the interconnection layer. A melting point of the first alloy is higher than a melting point of the first metal.
Public/Granted literature
- US20150076699A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2015-03-19
Information query
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