Invention Grant
- Patent Title: Methods for forming a hydrogen free silicon containing dielectric film
- Patent Title (中): 用于形成含氢的含硅电介质膜的方法
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Application No.: US13214161Application Date: 2011-08-20
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Publication No.: US09123707B2Publication Date: 2015-09-01
- Inventor: Soo Young Choi
- Applicant: Soo Young Choi
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: H01L21/314
- IPC: H01L21/314 ; H01L21/318 ; H01L21/316 ; H01L29/49 ; C23C16/30 ; C23C16/40 ; H01J37/32 ; H01L29/45 ; H01L29/66 ; H01L29/786 ; H01L21/02 ; H01L27/12
Abstract:
Embodiments of the disclosure generally provide methods of forming a hydrogen free silicon containing layer in TFT devices. The hydrogen free silicon containing layer may be used as a passivation layer, a gate dielectric layer, an etch stop layer, or other suitable layers in TFT devices, photodiodes, semiconductor diode, light-emitting diode (LED), or organic light-emitting diode (OLED), or other suitable display applications. In one embodiment, a method for forming a hydrogen free silicon containing layer in a thin film transistor includes supplying a gas mixture comprising a hydrogen free silicon containing gas and a reacting gas into a plasma enhanced chemical vapor deposition chamber, wherein the hydrogen free silicon containing gas is selected from a group consisting of SiF4, SiCl4, Si2Cl6, and forming a hydrogen free silicon containing layer on the substrate in the presence of the gas mixture.
Public/Granted literature
- US20120045904A1 METHODS FOR FORMING A HYDROGEN FREE SILICON CONTAINING DIELECTRIC FILM Public/Granted day:2012-02-23
Information query
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