Invention Grant
US09123709B2 Semiconductor device and method of manufacturing the same 有权
半导体装置及其制造方法

Semiconductor device and method of manufacturing the same
Abstract:
According to one embodiment, a first frame includes a first thin plate section and a first thick plate section. A second frame includes a second thin plate section and a second thick plate section. A semiconductor chip includes a first electrode bonded to a first inner surface of the first thin plate section of the first frame, and a second electrode bonded to a second inner surface of the second thick plate section of the second frame. A resin layer seals the semiconductor chip, but leaves exposed the first outer surface of the first frame and the second outer surface of the second frame.
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