Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14475438Application Date: 2014-09-02
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Publication No.: US09123709B2Publication Date: 2015-09-01
- Inventor: Koji Tamura
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Patterson & Sheridan, LLP
- Priority: JP2014-017326 20140131
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/495 ; H01L23/31 ; H01L23/00 ; H01L21/56

Abstract:
According to one embodiment, a first frame includes a first thin plate section and a first thick plate section. A second frame includes a second thin plate section and a second thick plate section. A semiconductor chip includes a first electrode bonded to a first inner surface of the first thin plate section of the first frame, and a second electrode bonded to a second inner surface of the second thick plate section of the second frame. A resin layer seals the semiconductor chip, but leaves exposed the first outer surface of the first frame and the second outer surface of the second frame.
Public/Granted literature
- US20150221581A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2015-08-06
Information query
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