Invention Grant
- Patent Title: Lead structures with vertical offsets
- Patent Title (中): 带垂直偏移的铅结构
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Application No.: US13989314Application Date: 2011-11-21
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Publication No.: US09123713B2Publication Date: 2015-09-01
- Inventor: Richard Dewitt Crisp , Belgacem Haba , Wael Zohni
- Applicant: Richard Dewitt Crisp , Belgacem Haba , Wael Zohni
- Applicant Address: US CA San Jose
- Assignee: Tessera, Inc.
- Current Assignee: Tessera, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- International Application: PCT/US2011/061647 WO 20111121
- International Announcement: WO2012/071325 WO 20120531
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/13 ; H01L23/00

Abstract:
A microelectronic structure includes a first row of contacts (14) and a second row of contacts (24) offset from the first row, so that the first and second rows cooperatively define pairs of contacts. These pairs of contacts include first pairs (30a) and second pairs (30b) arranged in alternating sequence in the row direction. The first pairs are provided with low connectors (32a), whereas the second pairs are provided with high connectors (32b). The high connectors and low connectors have sections vertically offset from one another to reduce mutual impedance between adjacent connectors.
Public/Granted literature
- US20130299958A1 LEAD STRUCTURES WITH VERTICAL OFFSETS Public/Granted day:2013-11-14
Information query
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