Invention Grant
- Patent Title: Semiconductor device manufacturing method and manufacturing apparatus
- Patent Title (中): 半导体装置的制造方法和制造装置
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Application No.: US13954833Application Date: 2013-07-30
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Publication No.: US09123717B2Publication Date: 2015-09-01
- Inventor: Kenro Nakamura , Mitsuyoshi Endo , Kazuyuki Higashi , Takashi Shirono
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz, Goodman & Chick PC
- Priority: JP2013-039025 20130228
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L21/46 ; H01L25/00 ; H01L21/67 ; H01L23/31 ; H01L21/56 ; H01L23/00 ; H01L21/683
Abstract:
According to one embodiment, a semiconductor device manufacturing method includes: bonding a first wafer and a second wafer to each other, to form a stack; rubbing a film attached with a fill material in a thin-film shape into a gap located between a bevel of the first wafer and a bevel of the second wafer, to fill the gap with the fill material; and thinning the first wafer.
Public/Granted literature
- US20140242779A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND MANUFACTURING APPARATUS Public/Granted day:2014-08-28
Information query
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