Invention Grant
- Patent Title: Metal-oxide-metal capacitor
- Patent Title (中): 金属氧化物金属电容器
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Application No.: US13533280Application Date: 2012-06-26
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Publication No.: US09123719B2Publication Date: 2015-09-01
- Inventor: Jiong Zhang , Joseph King , Akira Ito
- Applicant: Jiong Zhang , Joseph King , Akira Ito
- Applicant Address: US CA Irvine
- Assignee: Broadcom Corporation
- Current Assignee: Broadcom Corporation
- Current Assignee Address: US CA Irvine
- Agency: Brinks Gilson & Lione
- Main IPC: H01G4/002
- IPC: H01G4/002 ; H01L23/522 ; H01L27/08

Abstract:
A semiconductor structure may implement a metal-oxide-metal capacitor. When layer design rules change from one layer to the next, the structure may change the direction of the interleaved plates of the capacitor. For example, when the metallization width or spacing design rules change from layer M3 to layer M4, the structure may run the capacitor traces in different directions (e.g., orthogonal to one another) on M3 as compared to M4. Among the layers that adhere to the same design rules, for example layers M1, M2, and M3, the structure may run the capacitor traces in the same direction in each of the layers M1, M2, and M3. In this way, the capacitor traces overlap to large extent without misalignment on layers that have the same design rules, and the structure avoids misalignment of the capacitor traces when the design rules change.
Public/Granted literature
- US20130342955A1 Metal-Oxide-Metal Capacitor Public/Granted day:2013-12-26
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