Invention Grant
- Patent Title: Semiconductor device and method for manufacturing semiconductor device
- Patent Title (中): 半导体装置及半导体装置的制造方法
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Application No.: US14160951Application Date: 2014-01-22
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Publication No.: US09123728B2Publication Date: 2015-09-01
- Inventor: Takahiro Kono , Shinichi Akiyama , Hirofumi Watatani , Tamotsu Owada
- Applicant: FUJITSU SEMICONDUCTOR LIMITED
- Applicant Address: JP Yokohama
- Assignee: FUJITSU SEMICONDUCTOR LIMITED
- Current Assignee: FUJITSU SEMICONDUCTOR LIMITED
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2008-124583 20080512
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/532 ; H01L21/768
Abstract:
A semiconductor device includes an insulation film formed above a semiconductor substrate, a conductor containing Cu formed in the insulation film, and a layer film formed between the insulation film and the conductor and formed of a first metal film containing Ti and a second metal film different from the first metal film, a layer containing Ti and Si is formed on the surface of the conductor.
Public/Granted literature
- US20140131873A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2014-05-15
Information query
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