Invention Grant
- Patent Title: Alignment mark design for semiconductor device
- Patent Title (中): 半导体器件对准标记设计
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Application No.: US14185746Application Date: 2014-02-20
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Publication No.: US09123729B2Publication Date: 2015-09-01
- Inventor: Feng-Nien Tsai
- Applicant: MACRONIX INTERNATIONAL CO., LTD.
- Applicant Address: TW
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW
- Agency: Baker & McKenzie LLP
- Main IPC: H01L23/544
- IPC: H01L23/544 ; G03F9/00

Abstract:
Better alignment mark designs for semiconductor devices may substantially lessen the frequency of layer misalignment scanner alignment problems. Exemplary alignment mark designs substantially avoid or minimize damage during the fill-in and etching and chemical mechanical processing processes. Thus, additional processing steps to even out various layers or to address the misalignment problems may also be avoided.
Public/Granted literature
- US20140167297A1 ALIGNMENT MARK DESIGN FOR SEMICONDUCTOR DEVICE Public/Granted day:2014-06-19
Information query
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