Invention Grant
US09123735B2 Semiconductor device with combined passive device on chip back side
有权
具有芯片背面无源器件的半导体器件
- Patent Title: Semiconductor device with combined passive device on chip back side
- Patent Title (中): 具有芯片背面无源器件的半导体器件
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Application No.: US13955587Application Date: 2013-07-31
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Publication No.: US09123735B2Publication Date: 2015-09-01
- Inventor: Andreas Munding , Martin Gruber
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Shumaker & Sieffert, P.A.
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L21/02 ; H01L23/52 ; H01L23/48 ; H01L49/02 ; H01L23/64 ; H01L27/06

Abstract:
Semiconductor chips are described that combine a semiconductor device and a capacitor onto a single substrate such that the semiconductor device and the capacitor are electrically isolated from each other. In one example, a semiconductor chip includes a substrate having a first side and a second side, wherein the second side is opposite the first side. The semiconductor chip further includes a semiconductor device formed on the first side of the substrate and an electrically insulating layer formed on at least a portion of the second side of the substrate. The semiconductor chip further includes a capacitor device formed on at least a portion of the electrically insulating layer on the second side of the substrate, wherein the capacitor device is electrically insulated from the semiconductor device.
Public/Granted literature
- US20150034995A1 SEMICONDUCTOR DEVICE WITH COMBINED PASSIVE DEVICE ON CHIP BACK SIDE Public/Granted day:2015-02-05
Information query
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