Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14564761Application Date: 2014-12-09
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Publication No.: US09123736B2Publication Date: 2015-09-01
- Inventor: Jung Ryul Ahn , Jum Soo Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2011-0087136 20110830
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L27/108 ; H01L49/02 ; H01L27/105 ; H01L27/115 ; H01L21/762 ; H01L21/768

Abstract:
The semiconductor device includes a semiconductor substrate having a cell region and a peripheral circuit region defined therein, semiconductor memory elements formed over the semiconductor substrate in the cell region, an interlayer insulating layer formed over the semiconductor substrate in the peripheral circuit region, first conductive layers substantially vertically passing through the interlayer insulating layer, and arranged in a matrix, and second conductive layers coupling the first conductive layers in rows or columns, each pair of the second conductive layers and the first conductive layers coupled to the each pair of the second conductive layers, respectively, forming electrodes of a capacitor.
Public/Granted literature
- US20150093875A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2015-04-02
Information query
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