Invention Grant
US09123741B2 Metamorphic growth of III-V semiconductor on silicon substrate by MOCVD for high speed III-V transistors
有权
用于高速III-V晶体管的MOCVD，硅衬底上III-V半导体的变质生长
- Patent Title: Metamorphic growth of III-V semiconductor on silicon substrate by MOCVD for high speed III-V transistors
- Patent Title (中): 用于高速III-V晶体管的MOCVD，硅衬底上III-V半导体的变质生长
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Application No.: US13752971Application Date: 2013-01-29
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Publication No.: US09123741B2Publication Date: 2015-09-01
- Inventor: Kei May Lau , Chak Wah Tang
- Applicant: NANO AND ADVANCED MATERIALS INSTITUTE LIMITED
- Applicant Address: HK Kowloon
- Assignee: NANO AND ADVANCED MATERIALS INSTITUTE LIMITED
- Current Assignee: NANO AND ADVANCED MATERIALS INSTITUTE LIMITED
- Current Assignee Address: HK Kowloon
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer; Stanley N. Protigal
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/778 ; H01L29/10 ; H01L29/20 ; H01L21/02
Abstract:
A III-V semiconductor device on a silicon substrate is constructed with a silicon (Si) substrate onto which gallium arsenide (GaAs) indium phosphide (InP) and aluminum indium arsenide (AlInAs) to form a structure of AlInAs over InP over GaAs over Si. The GaAs is applied in at least one layer over the Si, followed by at least one layer of InP and at least one layer of AlInAs. A portion of the structure is doped and a cap or passivation layer is applied.
Public/Granted literature
- US20140209979A1 Metamorphic Growth Of III-V Semiconductor On Silicon Substrate By MOCVD for High Speed III-V Transistors Public/Granted day:2014-07-31
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