Invention Grant
- Patent Title: Device with a vertical gate structure
- Patent Title (中): 具有垂直栅极结构的器件
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Application No.: US14268817Application Date: 2014-05-02
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Publication No.: US09123745B2Publication Date: 2015-09-01
- Inventor: Harry-Hak-Lay Chuang , Ming Zhu , Yi-Ren Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/66 ; H01L21/28 ; H01L29/423 ; H01L21/8238 ; H01L21/768
Abstract:
A device includes a wafer substrate, a conical frustum structure formed in the wafer substrate, and a gate all-around (GAA) structure circumscribing the middle portion of the conical frustum structure. The conical frustum structure includes a drain formed at a bottom portion of the conical frustum, a source formed at a top portion of the vertical conical frustum, and a channel formed at a middle portion of the conical frustum connecting the source and the drain. The GAA structure overlaps with the source at one side of the GAA structure, crosses over the channel, and overlaps with the drain at another side of the GAA structure.
Public/Granted literature
- US20150017775A1 Device with a Vertical Gate Structure Public/Granted day:2015-01-15
Information query
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