Invention Grant
- Patent Title: Method of manufacturing a semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US14567810Application Date: 2014-12-11
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Publication No.: US09123748B2Publication Date: 2015-09-01
- Inventor: Seiichi Aritome
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2012-0046368 20120502
- Main IPC: H01L27/00
- IPC: H01L27/00 ; H01L29/66 ; H01L27/115 ; H01L29/788 ; H01L21/28 ; G11C16/04
Abstract:
A semiconductor device includes vertical channel layers, control gates and interlayer insulating layers stacked alternately with each other on the substrate and surrounding the vertical channel layers, floating gates interposed between the vertical channel layers and the control gates and separated from each other by the interlayer insulating layers, and charge blocking layers interposed between the floating gates and the control gates.
Public/Granted literature
- US20150099354A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-04-09
Information query
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