Invention Grant
- Patent Title: Nonvolatile semiconductor memory device and method of manufacturing the same
- Patent Title (中): 非易失性半导体存储器件及其制造方法
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Application No.: US14018836Application Date: 2013-09-05
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Publication No.: US09123749B2Publication Date: 2015-09-01
- Inventor: Tomoya Kawai , Naoki Yasuda
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Minato-ku
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2013-052446 20130314
- Main IPC: H01L29/792
- IPC: H01L29/792 ; H01L29/66 ; H01L27/115
Abstract:
According to one embodiment, a nonvolatile semiconductor memory device comprises a semiconductor substrate, a first layer, a first conductive layer, a second conductive layer, an insulating layer, a block insulating layer formed on an inner surface of a pair of through holes formed in the insulating layer, the second conductive layer, and the first conductive layer, and on an inner surface of a connecting hole formed in the first layer and configured, a charge storage layer formed on the block insulating layer, a tunnel insulating layer formed on the charge storage layer, and a semiconductor pillar formed on the tunnel insulating layer. The semiconductor pillar includes a doped silicide layer which is formed in the insulating layer, a silicon layer formed in the second conductive layer and the first conductive layer, and a silicide layer formed in first layer.
Public/Granted literature
- US20140264547A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2014-09-18
Information query
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