Invention Grant
- Patent Title: Heating device and semiconductor manufacturing apparatus
- Patent Title (中): 加热装置和半导体制造装置
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Application No.: US13795552Application Date: 2013-03-12
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Publication No.: US09123757B2Publication Date: 2015-09-01
- Inventor: Yutaka Unno , Junya Waki
- Applicant: NGK INSULATORS, LTD.
- Applicant Address: JP Nagoya
- Assignee: NGK Insulators, Ltd.
- Current Assignee: NGK Insulators, Ltd.
- Current Assignee Address: JP Nagoya
- Agency: Burr & Brown, PLLC
- Priority: JP2012-063054 20120321
- Main IPC: H05B3/68
- IPC: H05B3/68 ; C23C16/00 ; H01L21/67 ; H05B3/28 ; H05B1/02 ; H01L21/687

Abstract:
A heating device 10 includes a ceramic base 20, a resistance heating element 22, and a hollow shaft 40. The ceramic base 20 includes a central portion 20a and a peripheral portion 20b. The resistance heating element 22 is designed in such a manner that the density of heating in the central portion 20a is 1.4 to 2.0 times that in the peripheral portion 20b. The hollow shaft 40 includes a first section 41 and a second section 42. The thickness tb1 of the first section 41 is 6 to 10 mm. The thickness tb2 of the second section 42 is 0.3 to 0.5 times the thickness tb1 of the first section 41. The length of the first section 41 is 0.4 to 0/8 times the overall length of the hollow shaft 40.
Public/Granted literature
- US20130248509A1 HEATING DEVICE AND SEMICONDUCTOR MANUFACTURING APPARATUS Public/Granted day:2013-09-26
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