Invention Grant
- Patent Title: Susceptor, vapor phase growth apparatus, and method of manufacturing epitaxial wafer
- Patent Title (中): 受体，气相生长装置和外延晶片的制造方法
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Application No.: US14301600Application Date: 2014-06-11
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Publication No.: US09123759B2Publication Date: 2015-09-01
- Inventor: Junji Miyashita
- Applicant: SUMCO CORPORATION
- Applicant Address: JP Tokyo
- Assignee: SUMCO CORPORATION
- Current Assignee: SUMCO CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Greenblum & Bernstein, P.L.C.
- Priority: JP2008-197880 20080731
- Main IPC: H01L21/673
- IPC: H01L21/673 ; C23C16/458 ; C30B25/12 ; C30B29/06 ; H01L21/02
Abstract:
An aspect of the present invention relates to a susceptor comprising a counterbored groove receiving a semiconductor wafer in the course of manufacturing an epitaxial wafer by vapor phase growing an epitaxial layer on a surface of the semiconductor wafer, wherein a lateral wall of the counterbored groove is comprised of at least one flat portion and at least one protruding portion being higher than the flat portion, and a height of the flat portion is equal to or greater than a thickness of the semiconductor wafer.
Public/Granted literature
- US20140290564A1 SUSCEPTOR, VAPOR PHASE GROWTH APPARATUS, AND METHOD OF MANUFACTURING EPITAXIAL WAFER Public/Granted day:2014-10-02
Information query
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