Invention Grant
- Patent Title: Semiconductor chip carriers with monolithically integrated quantum dot devices and method of manufacture thereof
- Patent Title (中): 具有单片集成量子点器件的半导体芯片载体及其制造方法
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Application No.: US13288922Application Date: 2011-11-03
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Publication No.: US09123768B2Publication Date: 2015-09-01
- Inventor: L. Pierre de Rochemont
- Applicant: L. Pierre de Rochemont
- Agency: Burns & Levinson LLP
- Agent David W. Gomes
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/78 ; H01L21/06 ; H01L29/739 ; B82Y10/00 ; B82Y40/00 ; H01L29/12 ; H01L29/15 ; H01L29/04 ; H01L21/02 ; H01L33/18
Abstract:
A three-dimensional polycrystalline semiconductor material provides a major ingredient forming individual crystalline grains having a nominal maximum grain diameter less than or equal to 50 nm, and a minor ingredient forming boundaries between the individual crystalline grains.
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