Invention Grant
- Patent Title: Power semiconductor device and fabrication method thereof
- Patent Title (中): 功率半导体器件及其制造方法
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Application No.: US13915810Application Date: 2013-06-12
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Publication No.: US09123769B2Publication Date: 2015-09-01
- Inventor: Ho Hyun Kim , Seung Bae Hur , Seung Wook Song , Jeong Hwan Park , Ha Yong Yang , In Su Kim
- Applicant: Magnachip Semiconductor, Ltd.
- Applicant Address: KR Cheongju-si
- Assignee: Magnachip Semiconductor, Ltd.
- Current Assignee: Magnachip Semiconductor, Ltd.
- Current Assignee Address: KR Cheongju-si
- Agency: NSIP Law
- Priority: KR10-2012-0101712 20120913
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/739
Abstract:
Provided is a power semiconductor device and a fabrication method thereof are provided. The power semiconductor device includes: a first epitaxial layer; a collector layer formed on one side of the first epitaxial layer; and a second epitaxial layer formed on another side of the first epitaxial layer, the first epitaxial layer having a higher doping concentration than the second epitaxial layer.
Public/Granted literature
- US20140070267A1 POWER SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF Public/Granted day:2014-03-13
Information query
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