Invention Grant
- Patent Title: Charge reservoir IGBT top structure
- Patent Title (中): 蓄电池IGBT顶部结构
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Application No.: US14082582Application Date: 2013-11-18
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Publication No.: US09123770B2Publication Date: 2015-09-01
- Inventor: Jun Hu
- Applicant: Alpha and Omega Semiconductor Incorporated
- Applicant Address: US CA Sunnyvale
- Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee Address: US CA Sunnyvale
- Agency: JDI Patent
- Agent Joshua D. Isenberg
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L29/66 ; H01L29/10
Abstract:
An IGBT device includes one or more trench gates disposed over a semiconductor substrate and a floating body region of the first conductivity type disposed between two neighboring trench gates and between a semiconductor substrate and a heavily doped top region of the second conductivity type. A body region of the first conductivity type disposed over the top region has a doping concentration higher than that of the floating body region of the first conductivity type. It is emphasized that this abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
Public/Granted literature
- US20150137175A1 CHARGE RESERVOIR IGBT TOP STRUCTURE Public/Granted day:2015-05-21
Information query
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