A semiconductor device having a multi-level interconnection structure including a plurality of interconnection layers stacked one on another on a semiconductor substrate is provided, and a production method for the semiconductor device. In the production method, forming each of the interconnection layers of the multi-level interconnection structure includes: forming a real interconnection and a dummy interconnection, forming an insulative film covering the real interconnection and the dummy interconnection, and planarizing a surface of the insulative film. The production method may include computing an in-plane distribution of an overall thickness of the multi-level interconnection structure to be expected when no dummy interconnection is formed; and defining a dummy present zone and a dummy absent zone. The dummy interconnection is formed in the defined dummy present zone outside the defined dummy absent zone in each of the interconnection layers.