Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14226454Application Date: 2014-03-26
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Publication No.: US09123792B2Publication Date: 2015-09-01
- Inventor: Masahiro Nishi
- Applicant: Sumitomo Electric Device Innovations, Inc.
- Applicant Address: JP Yokohama-shi
- Assignee: Sumitomo Electric Device Innovations, Inc.
- Current Assignee: Sumitomo Electric Device Innovations, Inc.
- Current Assignee Address: JP Yokohama-shi
- Agency: Venable LLP
- Agent Michael A. Sartori
- Priority: JP2013-074629 20130329
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/423 ; H01L21/285 ; H01L29/47 ; H01L29/20
Abstract:
A semiconductor device includes: a nitride semiconductor layer; a first silicon nitride film that is formed on the nitride semiconductor layer, has a first opening whose inner wall is a forward tapered shape; a second silicon nitride film that is formed on the first silicon nitride film, and has a second opening whose inner wall is an inverse tapered shape; and a gate electrode formed so as to cover the whole surface of the nitride semiconductor layer exposed on the inside of the first opening; wherein a side wall of the gate electrode separates from the first silicon nitride film and the second silicon nitride film via a cavity.
Public/Granted literature
- US20140291774A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2014-10-02
Information query
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