Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14176778Application Date: 2014-02-10
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Publication No.: US09123796B2Publication Date: 2015-09-01
- Inventor: Masayuki Sugiura
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Patterson & Sheridan, LLP
- Priority: JP2013-108033 20130522
- Main IPC: H01L21/331
- IPC: H01L21/331 ; H01L29/78
Abstract:
A semiconductor device includes a gate electrode, source regions and drain regions, a body contact region, and a body bias control electrode. The gate electrode includes a plurality of first portions arranged in parallel with a first distance therebetween, and a second portion connecting the plurality of first portions. The source regions and the drain regions are provided between the plurality of first portions. The body contact region is disposed on the other side of the source regions and the drain regions relative to the second portion. The body bias control electrode is provided on the body contact region in parallel with the second portion at a second distance from the second portion that is greater than the first distance, and is electrically connected to the body contact region.
Public/Granted literature
- US20140346601A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-11-27
Information query
IPC分类:
