Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14317426Application Date: 2014-06-27
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Publication No.: US09123800B2Publication Date: 2015-09-01
- Inventor: Dae Hwan Chun , Kyoung-Kook Hong , Jong Seok Lee , Junghee Park , Youngkyun Jung
- Applicant: Hyundai Motor Company
- Applicant Address: KR Seoul
- Assignee: Hyundai Motor Company
- Current Assignee: Hyundai Motor Company
- Current Assignee Address: KR Seoul
- Agency: Mintz Levin Cohn Ferris Glovsky and Popeo, P.C.
- Agent Peter F. Corless
- Priority: KR10-2013-0167816 20131230
- Main IPC: H01L29/12
- IPC: H01L29/12 ; H01L29/16 ; H01L29/36 ; H01L29/78 ; H01L21/205 ; H01L21/335 ; H01L21/762 ; H01L29/66 ; H01L29/06 ; H01L29/423
Abstract:
A semiconductor device includes: a first n− type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate including a current carrying region and termination regions positioned at both sides of the current carrying region; a p type epitaxial layer disposed on the first n− type epitaxial layer; a second n− type epitaxial layer disposed on the p type epitaxial layer; a first trench disposed in the current carrying region; a second trench disposed in each termination region; a gate insulating layer disposed in the first trench; a gate electrode disposed on the gate insulating layer; and a termination insulating layer disposed in the second trench, in which a side of the termination insulating layer contacts the p type epitaxial layer and the second n− type epitaxial layer.
Public/Granted literature
- US20150187929A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2015-07-02
Information query
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