Compositions for solution process, electronic devices fabricated using the same, and fabrication methods thereof

Invention Grant

US09123818B2 Compositions for solution process, electronic devices fabricated using the same, and fabrication methods thereof 有权

Title translation: 用于溶液工艺的组合物，使用其制造的电子器件及其制造方法

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Patent Title: Compositions for solution process, electronic devices fabricated using the same, and fabrication methods thereof
Patent Title (中): 用于溶液工艺的组合物，使用其制造的电子器件及其制造方法
Application No.: US13322193

Application Date: 2010-05-24
Publication No.: US09123818B2

Publication Date: 2015-09-01
Inventor: Hyun Jae Kim , Woong Hee Jeong , Byung Du Ahn , Gun Hee Kim
Applicant: Hyun Jae Kim , Woong Hee Jeong , Byung Du Ahn , Gun Hee Kim
Applicant Address: KR Seoul
Assignee: Industry-Academic Cooperation Foundation, Yonsei University
Current Assignee: Industry-Academic Cooperation Foundation, Yonsei University
Current Assignee Address: KR Seoul
Agency: Carter, DeLuca, Farrell & Schmidt, LLP
Priority: KR10-2009-0046001 20090526; KR10-2009-0092635 20090929
International Application: PCT/KR2010/003266 WO 20100524
International Announcement: WO2010/137838 WO 20101202
Main IPC: H01L29/786
IPC: H01L29/786 ; B82Y10/00 ; H01L29/06 ; H01L27/12

Compositions for solution process, electronic devices fabricated using the same, and fabrication methods thereof

Abstract:

Exemplary embodiments provide compositions for a solution process, electronic devices fabricated using the same, and fabrication methods thereof. An oxide nano-structure is formed using a sol-gel process. An oxide thin film transistor is formed using the oxide nano-structure.

Abstract(Chinese):

示例性实施例提供了用于溶液工艺的组合物，使用其制备的电子器件及其制造方法。使用溶胶 - 凝胶法形成氧化物纳米结构。使用氧化物纳米结构形成氧化物薄膜晶体管。

Public/Granted literature

US20120080678A1 COMPOSITIONS FOR SOLUTION PROCESS, ELECTRONIC DEVICES FABRICATED USING THE SAME, AND FABRICATION METHODS THEREOF Public/Granted day:2012-04-05

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76	...单极器件
H01L29/772	....场效应晶体管
H01L29/78	.....由绝缘栅产生场效应的
H01L29/786	......薄膜晶体管