中科微点-全球专利检索

  1. Login
  2. Sign Up
Invention Grant
US09123820B2 Thin film transistor including semiconductor oxide layer having reduced resistance regions 有权
薄膜晶体管包括具有减小的电阻区域的半导体氧化物层

Thin film transistor including semiconductor oxide layer having reduced resistance regions
Abstract:
A semiconductor device (ST) includes a substrate (11), a gate electrode (12b), a gate insulating film (13b), an oxide semiconductor film (14b) including a channel part (14bc) formed in a position facing the gate electrode (12b), a source electrode (15bs), and a drain electrode (15bd). The source electrode (15bs) and the drain electrode (15bd) is arranged so as not to overlap with the gate electrode (12b) as viewed in the plane. A region adjacent to the gate electrode (12b) and the source electrode (15bs) and a region adjacent to the gate electrode (12b) and the drain electrode (15bd) are, in a region where the source electrode (15bs) and the drain electrode (15bd) does not overlap with the gate electrode (12b), processed such that resistance in a region of the oxide semiconductor film (14b) including a surface thereof is reduced.
Abstract(Chinese):

半导体器件（ST）包括衬底（11），栅极电极（12b），栅极绝缘膜（13b），氧化物半导体膜（14b），其包括形成在面对栅电极的位置的沟道部分 （12b），源极（15bs）和漏极（15bd）。 源极电极（15bs）和漏极电极（15bd）被布置成与平面中的栅电极（12b）不重叠。 与栅电极（12b）和源电极（15bs）相邻的区域和与栅电极（12b）和漏电极（15bd）相邻的区域在源电极（15bs）和漏极 电极（15bd）不与栅电极（12b）重叠，进行处理，使得包括其表面的氧化物半导体膜（14b）的区域中的电阻降低。

Public/Granted literature
Information query
Espacenet
Patent Agency Ranking
0/0