According to embodiment, a nonvolatile semiconductor memory device, includes: a memory cell region; and a peripheral region, the memory cell region including: a semiconductor layer including semiconductor regions; control gate electrodes; a first insulating film; a semiconductor-containing layer having a smaller thickness than the first insulating film; and a second insulating film, the peripheral region including: the semiconductor layer; a third insulating film; the semiconductor-containing layer, and a periphery of the semiconductor-containing layer being surrounded by an element isolation region; the first insulating film provided on the semiconductor-containing layer; and a pair of conductive layers extending from a surface of the first insulating film to reach the third insulating film via the semiconductor-containing layer, and the pair of conductive layers being in contact with part of a lower surface of the semiconductor-containing layer.