Invention Grant
- Patent Title: Method of forming an integrated circuit package
- Patent Title (中): 形成集成电路封装的方法
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Application No.: US14534838Application Date: 2014-11-06
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Publication No.: US09123824B2Publication Date: 2015-09-01
- Inventor: Hsien-Wei Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW
- Agency: Lowe Hauptman & Ham, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/00 ; H01L25/10

Abstract:
A method of fabricating an integrated circuit package assembly comprises forming solder bumps over a first surface of a first integrated circuit package. The method also comprises forming at least one first support structure over the first surface of the first integrated circuit package or over a second surface of a second integrated circuit package. The method further comprises mounting the first integrated circuit package over a second integrated circuit package. The first integrated circuit package is mounted over the second integrated circuit package with the first surface facing the second surface, and the at least one first support structure is electrically isolated.
Public/Granted literature
- US20150064845A1 METHOD OF FORMING AN INTEGRATED CIRCUIT PACKAGE Public/Granted day:2015-03-05
Information query
IPC分类: