Single crystal source-drain merged by polycrystalline material

Invention Grant

US09123826B1 Single crystal source-drain merged by polycrystalline material 有权

Title translation: 单晶源极漏极由多晶材料合并

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Patent Title: Single crystal source-drain merged by polycrystalline material
Patent Title (中): 单晶源极漏极由多晶材料合并
Application No.: US14222780

Application Date: 2014-03-24
Publication No.: US09123826B1

Publication Date: 2015-09-01
Inventor: Eric C. Harley , Judson R. Holt , Yue Ke , Rishikesh Krishnan , Timothy J. McArdle , Alexander Reznicek , Dominic J. Schepis
Applicant: International Business Machines Corporation
Applicant Address: US NY Armonk
Assignee: International Business Machines Corporation
Current Assignee: International Business Machines Corporation
Current Assignee Address: US NY Armonk
Agent L. Jeffrey Kelly; Yuanmin Cai
Main IPC: H01L21/8234
IPC: H01L21/8234 ; H01L27/092

Single crystal source-drain merged by polycrystalline material

Abstract:

A method of forming a semiconductor structure includes forming a first fin and a second fin on a substrate. A gate structure is formed over a first portion of the first fin and the second fin without covering a second portion of the first fin and the second fin. Single-crystal epitaxial layers are deposited surrounding the second portion of the first fin and the second fin such that the single-crystal epitaxial layer on the first fin does not contact the single-crystal epitaxial layer on the second fin. A polycrystalline layer is then deposited surrounding the single-crystal epitaxial layers, so that the polycrystalline layer contacts the single-crystal epitaxial layer on the first fin and the single-crystal epitaxial layer on the second fin. The single-crystal epitaxial layers and the polycrystalline layer form a merged source-drain region.

Abstract(Chinese):

形成半导体结构的方法包括在衬底上形成第一鳍片和第二鳍片。栅极结构形成在第一鳍片和第二鳍片的第一部分上，而不覆盖第一鳍片和第二鳍片的第二部分。围绕第一鳍片和第二鳍片的第二部分沉积单晶外延层，使得第一鳍片上的单晶外延层不接触第二鳍片上的单晶外延层。然后沉积围绕单晶外延层的多晶层，使得多晶层接触第一鳍上的单晶外延层和第二鳍上的单晶外延层。单晶外延层和多晶层形成合并的源 - 漏区。

Public/Granted literature

US20150270332A1 SINGLE-CRYSTAL SOURCE-DRAIN MERGED BY POLYCRYSTALLINE MATERIAL Public/Granted day:2015-09-24

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺