Invention Grant
- Patent Title: Manufacturing method for semiconductor device
- Patent Title (中): 半导体器件的制造方法
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Application No.: US14356844Application Date: 2012-11-12
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Publication No.: US09123830B2Publication Date: 2015-09-01
- Inventor: Kensuke Nakamura , Toru Meura , Yoji Ishimura
- Applicant: SUMITOMO BAKELITE CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: SUMITOMO BAKELITE CO., LTD.
- Current Assignee: SUMITOMO BAKELITE CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JP2011-247023 20111111; JP2012-064719 20120322
- International Application: PCT/JP2012/079256 WO 20121112
- International Announcement: WO2013/069798 WO 20130516
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/00 ; H01L25/065 ; H01L25/07 ; H01L25/18

Abstract:
Provided is a method of manufacturing a semiconductor device that has a plurality of semiconductor components and a plurality of resin layers, the method including: a step in which resin layers and semiconductor components are laminated alternately on a substrate, and the same is adhered by being subjected to heating and pressurization at a temperature lower than the temperature at which the substrate and/or a solder layer of the semiconductor components melts; and a step in which heat and pressure are applied at a temperature at which the solder layer melts or a temperature higher than said temperature.
Public/Granted literature
- US20140312511A1 MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE Public/Granted day:2014-10-23
Information query
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