Invention Grant
US09123832B2 Fabricating method of nano structure for antireflection and fabricating method of photo device integrated with antireflection nano structure 有权
抗反射纳米结构的制造方法和抗反射纳米结构的光器件制造方法

Fabricating method of nano structure for antireflection and fabricating method of photo device integrated with antireflection nano structure
Abstract:
A method of fabricating nanostructure for antireflection and a method of fabricating a photo device integrated with the nanostructure for antireflection are provided. The fabrication of the nanostructure for antireflection includes coating a solution containing a combination of metal ions with organic or inorganic ions on a substrate, sintering the coated solution using an annealing process to grow nanoscale metal particles, and chemically etching the substrate using the metal particles as mask or accelerator to form a subwavelength nanostructure on the surface of the substrate, thereby manufacturing the nanostructure for antireflection without an apparatus requiring a vacuum state using a simple method for a short amount of time to minimize reflection of light at an interface between a semiconductor material and the air, and producing a photo device having good luminous efficiency and performance at low cost in large quantities by applying it to the photo device.
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