Invention Grant
- Patent Title: Fabricating method of nano structure for antireflection and fabricating method of photo device integrated with antireflection nano structure
- Patent Title (中): 抗反射纳米结构的制造方法和抗反射纳米结构的光器件制造方法
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Application No.: US13702172Application Date: 2010-11-30
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Publication No.: US09123832B2Publication Date: 2015-09-01
- Inventor: Chan Il Yeo , Yong Tak Lee , Young Min Song
- Applicant: Chan Il Yeo , Yong Tak Lee , Young Min Song
- Applicant Address: KR Gwangju
- Assignee: Gwangju Institute of Science and Technology
- Current Assignee: Gwangju Institute of Science and Technology
- Current Assignee Address: KR Gwangju
- Agency: Nath, Goldberg & Meyer
- Agent Joshua B. Goldberg; Scott H. Blackman
- Priority: KR10-2010-0074565 20100802
- International Application: PCT/KR2010/008510 WO 20101130
- International Announcement: WO2012/018163 WO 20120209
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L33/00 ; B81C1/00 ; H01L33/22

Abstract:
A method of fabricating nanostructure for antireflection and a method of fabricating a photo device integrated with the nanostructure for antireflection are provided. The fabrication of the nanostructure for antireflection includes coating a solution containing a combination of metal ions with organic or inorganic ions on a substrate, sintering the coated solution using an annealing process to grow nanoscale metal particles, and chemically etching the substrate using the metal particles as mask or accelerator to form a subwavelength nanostructure on the surface of the substrate, thereby manufacturing the nanostructure for antireflection without an apparatus requiring a vacuum state using a simple method for a short amount of time to minimize reflection of light at an interface between a semiconductor material and the air, and producing a photo device having good luminous efficiency and performance at low cost in large quantities by applying it to the photo device.
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