Invention Grant
- Patent Title: Image sensor with stacked grid structure
- Patent Title (中): 具有堆叠网格结构的图像传感器
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Application No.: US13799043Application Date: 2013-03-13
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Publication No.: US09123839B2Publication Date: 2015-09-01
- Inventor: Yun-Wei Cheng , Volume Chien , Chao Chih-Kang , Chi-Cherng Jeng , Chen Hsin-Chi
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsin-Chu
- Agency: Cooper Legal Group, LLC
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L31/0232 ; H01L31/18 ; H01L27/144

Abstract:
Among other things, one or more image sensors and techniques for guiding light towards a photodiode are provided. An image sensor comprises a metal grid configured to direct light towards a corresponding photodiode and away from other photodiodes. The image sensor also comprises a dielectric grid and a filler grid over the metal grid to direct light towards the corresponding photodiode and away from other photodiodes, where the filler grid has a different refractive index than the dielectric grid. In this way, crosstalk, otherwise resulting from detection of light by incorrect photodiodes, is mitigated.
Public/Granted literature
- US20140264685A1 IMAGE SENSOR WITH STACKED GRID STRUCTURE Public/Granted day:2014-09-18
Information query
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