Invention Grant
- Patent Title: Semiconductor grain and oxide layer for photovoltaic cells
- Patent Title (中): 用于光伏电池的半导体晶粒和氧化物层
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Application No.: US13867605Application Date: 2013-04-22
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Publication No.: US09123844B2Publication Date: 2015-09-01
- Inventor: Mariana R. Munteanu , Erol Girt
- Applicant: Zetta Research and Development LLC—AQT Series
- Applicant Address: US DE Wilmington
- Assignee: ZETTA RESEARCH AND DEVELOPMENT LLC—AQT SERIES
- Current Assignee: ZETTA RESEARCH AND DEVELOPMENT LLC—AQT SERIES
- Current Assignee Address: US DE Wilmington
- Agency: Mattingly & Malur, PC
- Main IPC: H01L31/042
- IPC: H01L31/042 ; H01L31/0352 ; B82Y20/00 ; B82Y30/00 ; H01L31/032 ; H01L31/0384 ; H01L31/072 ; H01L31/075 ; H01L31/18 ; H01L51/00 ; H01L51/42

Abstract:
Photovoltaic structures for the conversion of solar irradiance into electrical free energy. In a particular implementation, a photovoltaic cell includes a granular semiconductor and oxide layer with nanometer-size absorber semiconductor grains surrounded by a matrix of oxide. The semiconductor and oxide layer is disposed between electron and hole conducting layers. In some implementations, multiple semiconductor and oxide layers can be deposited.
Public/Granted literature
- US20130228217A1 SEMICONDUCTOR GRAIN AND OXIDE LAYER FOR PHOTOVOLTAIC CELLS Public/Granted day:2013-09-05
Information query
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