Invention Grant
- Patent Title: Manufacturing method of electron multiplier substrate, manufacturing method of electron multiplier and manufacturing method of radiation detector
- Patent Title (中): 电子倍增器基板的制造方法，电子倍增器的制造方法和放射线检测器的制造方法
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Application No.: US13990496Application Date: 2011-11-22
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Publication No.: US09123855B2Publication Date: 2015-09-01
- Inventor: Takashi Fushie , Hajime Kikuchi
- Applicant: Takashi Fushie , Hajime Kikuchi
- Applicant Address: JP Tokyo
- Assignee: HOYA CORPORATION
- Current Assignee: HOYA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2010-268852 20101201
- International Application: PCT/JP2011/076904 WO 20111122
- International Announcement: WO2012/073758 WO 20120607
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L31/115 ; H01J43/24
Abstract:
An underlayer is formed on a side wall 101a of a through hole 101 out of the side wall 101a of the through hole 101 and a substrate main surface, with a main surface having a low adhesion to a conductive layer disposed as an upper surface, and the conductive layer is formed on the substrate main surface and the side wall 101a of the through hole 101 on which the underlayer is formed, and the underlayer formed on the side wall 101a of the through hole 101 is selectively etched.
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