Invention Grant
- Patent Title: Group 13 nitride crystal and substrate thereof
- Patent Title (中): 13族氮化物晶体及其衬底
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Application No.: US13603678Application Date: 2012-09-05
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Publication No.: US09123863B2Publication Date: 2015-09-01
- Inventor: Masahiro Hayashi , Seiji Sarayama , Takashi Satoh , Hiroshi Nambu , Chiharu Kimura , Naoya Miyoshi
- Applicant: Masahiro Hayashi , Seiji Sarayama , Takashi Satoh , Hiroshi Nambu , Chiharu Kimura , Naoya Miyoshi
- Applicant Address: JP Tokyo
- Assignee: RICOH COMPANY, LTD.
- Current Assignee: RICOH COMPANY, LTD.
- Current Assignee Address: JP Tokyo
- Agency: Cooper & Dunham LLP
- Priority: JP2011-201195 20110914
- Main IPC: H01L33/32
- IPC: H01L33/32 ; H01L29/04 ; H01L33/00 ; H01L29/20 ; H01L33/38 ; H01L33/18 ; H01L33/24

Abstract:
A group 13 nitride crystal has a hexagonal crystal structure and at least contains nitrogen atom and at least a kind of metal atoms selected from a group consisting of B, Al, Ga, In, and Tl. The group 13 nitride crystal includes a first region located at an inner side of a cross section intersecting a c-axis, and a second region surrounding at least a part of an outer periphery of the first region, having a thickness larger than a maximum diameter of the first region, and having a carrier density higher than that of the first region.
Public/Granted literature
- US20130062660A1 GROUP 13 NITRIDE CRYSTAL AND SUBSTRATE THEREOF Public/Granted day:2013-03-14
Information query
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