Invention Grant
- Patent Title: Thin-film magnetoresistance sensing element, combination thereof, and electronic device coupled to the combination
- Patent Title (中): 薄膜磁阻感测元件,其组合以及耦合到该组合的电子器件
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Application No.: US13978355Application Date: 2011-12-30
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Publication No.: US09123875B2Publication Date: 2015-09-01
- Inventor: James Geza Deak , Songsheng Xue
- Applicant: James Geza Deak , Songsheng Xue
- Applicant Address: CN
- Assignee: Multidimension Technology Co., Ltd.
- Current Assignee: Multidimension Technology Co., Ltd.
- Current Assignee Address: CN
- Agency: Schwegman Lundberg & Woessner, P.A.
- Priority: CN201110002406 20110107; CN201110141226 20110527
- International Application: PCT/CN2011/085090 WO 20111230
- International Announcement: WO2012/092831 WO 20120712
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L43/02 ; B82Y25/00 ; G01R33/09

Abstract:
A thin film magnetoresistive sensor for detecting a magnetic field components perpendicular and parallel to the plane of the sensor substrate is disclosed. The sensing element comprises a free layer, a reference layer, and a spacer layer between the free layer and the reference layer. The easy-axis magnetization inherent to the material of the free layer is arranged to be perpendicular to the plane of the sensor substrate. The magnetization direction of the reference layer is confined to a direction parallel to the substrate plane. The reference layer consists of a ferromagnetic layer exchange coupled to an antiferromagnetic layer, or consists of a ferromagnetic layer having a higher coercive force than that of the free layer. The spacer layer is composed of an insulating material or a conductive material. The magnetoresistive sensor further includes an array of aforementioned sensing elements coupled to an electronic device to provide three-axis sensing.
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