A magnetic memory device includes a magnetic thin wire including magnetic domains along a direction in which the magnetic thin wire extends. Magnetization directions of the magnetic domains are variable. A magnetic tunnel junction (MTJ) structure includes a pinned layer with a fixed magnetization direction and an insulator, and makes an MTJ including the pinned layer and insulator and a magnetic domain in the magnetic thin wire in a first position to sandwich the insulator with pinned layer. First and second electrodes are at both ends of the magnetic thin wire. At least one third electrode is coupled to the magnetic thin wire between the first and second electrodes.